vlin26a1-03g www.vishay.com vishay semiconductors rev. 1.1, 14-oct-15 1 document number: 85895 for technical questions, contact: esdprotection@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 bidirectional symmetrical (bisy) low capacitance, single-line esd-protection diode in sot-323 marking (example only) abc = type code (see table below) ? ww = date code working week ? vy = date code year features ? for lin-bus applications ? small sot-323 package ? aec-q101 qualified ? 1-line esd-protection ? working range 26.5 v ? low leakage current i r < 0.05 a ? low load capacitance c d < 15 pf ? esd-protection acc. iec 61000-4-2 ? 30 kv contact discharge ? 30 kv air discharge ? e3 - pins plated with tin (sn) ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 s ot-323 22743 3 1 2 22745 22744 abc ww vy ordering information part number (example) environmental and quality code packaging code ordering code (example) aec-q101 qualified r o hs-compliant + lead (p b )-free terminations tin plated 3k per 7" reel (8 mm tape) 15k/box = moq 10k per 13" reel (8 mm tape) 10k/box = moq standard green vlin26a1-03g - e 3 -08 VLIN26A1-03G-E3-08 vlin26a1-03g h e 3 -08 vlin26a1-03ghe3-08 vlin26a1-03g - e 3 -18 vlin26a1-03g-e3-18 vlin26a1-03g h e 3 -18 vlin26a1-03ghe3-18 package data device name package name type code weight molding compound flammability rating moisture sensitivity level soldering conditions vlin26a1-03g sot-323 6a1 5.65 mg ul 94 v-0 msl level 1 (according j-std-020) peak temperature max. 260 c absolute maximum ratings parameter test conditions symbol value unit peak pulse current t a = 25 c; acc. iec 61000-4-5; t p = 8/20 s; single shot i ppm 3a peak pulse power t a = 25 c; acc. iec 61000-4-5; t p = 8/20 s; single shot p pp 150 w esd immunity contact discharge acc. ie c 61000-4-2; 10 pulses; t a = 25 c v esd 30 kv air discharge acc. iec 61000-4-2; 10 pulses; t a = 25 c 30 kv operating temperature junction temperature t j -55 to +150 c storage temperature t stg -55 to +150 c
vlin26a1-03g www.vishay.com vishay semiconductors rev. 1.1, 14-oct-15 2 document number: 85895 for technical questions, contact: esdprotection@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - esd discharge current wave form acc. iec 61000-4-2 (330 ? / 150 pf) fig. 2 - 8/20 s peak pulse current wave form acc. iec 61000-4-5 fig. 3 - typical capacitance c d vs. reverse voltage v r fig. 4 - typical reverse voltage v r vs. reverse current i r electrical characteristics (pin 1 to 3, 3 to 1) ? (t amb = 25 c, unless otherwise specified) parameter test conditions/remarks symbol min. typ. max. unit protection paths number of li nes which can be protected n channel --1lines reverse stand-off voltage max. reverse working voltage v rwm - - 26.5 v reverse voltage at i r = 0.05 a v r 26.5 - - v reverse current at v rwm = 26.5 v i r - - 0.05 a reverse breakdown voltage at i r = 1 ma v br 28 30 32 v reverse clamping voltage at i pp 1 a; t p = 8/20 s v c -3240v at i pp = i ppm = 3 a; t p = 8/20 s v c -3850v capacitance at v r = 0 v, f = 1 mhz c d -1015pf 0 % 20 % 40 % 60 % 80 % 100 % 120 % -10 0 102030405060708090100 time (ns) discharge current i esd rise time = 0.7 ns to 1 ns 53 % 27 % 20557 0 % 20 % 40 % 60 % 80 % 100 % 010203040 time (s) i ppm 20 s to 50 % 8 s to 100 % 20548 22763 0 2 4 6 8 10 12 -30 -20 -10 0 10 20 30 v r (v) c d (pf) f = 1 mhz 22764 i r (a) v r (v) 0 5 10 15 20 25 30 35 0.001 0.1 10 1000 pin 1-3 or 3-1
vlin26a1-03g www.vishay.com vishay semiconductors rev. 1.1, 14-oct-15 3 document number: 85895 for technical questions, contact: esdprotection@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - typical peak clamping voltage v c vs. peak pulse current i pp fig. 6 - typical clamping voltage v c-tlp vs. pulse current i tlp package dimensions in millimeters (inches) sot-323 i pp (a) v c (v) 0 5 10 15 20 25 30 35 40 45 01234 pin 1-3 or 3-1 mea s ured acc. iec 61000-4-5 (8/20 s - wave form) i tlp (a) v c-tlp (v) 22766 0 10 20 30 40 50 60 70 80 90 0 102030405060 tran s mi ss ion line pul s e tlp: t p = 100 n s pin 1-3 or 3-1 foot print recommendation: rev. 1 - date: 06. april 2010 21113 document no.: 6.541-5040.02-4 1.3 (0.051) 0.65 (0.026) 1.8 (0.071) 0.8 (0.031) 0.6 (0.024) 0.15 (0.006) 0.08 (0.003) 1.1 (0.043) 0.8 (0.031) 2.2 (0.087) 2.0 (0.079) 0.4 (0.016) 0.2 (0.008) 1.35 (0.053) 1.15 (0.045) 1.4 (0.055) 1.2 (0.047) 1.0 (0.039) 0.8 (0.031) 0.525 (0.021) ref. 2.45 (0.096) 2.15 (0.085) 0.65 (0.026) typ 0.46 (0.018) 0.26 (0.010) 8 0 0.1 (0.004) 0.0 (0.000)
vlin26a1-03g www.vishay.com vishay semiconductors rev. 1.1, 14-oct-15 4 document number: 85895 for technical questions, contact: esdprotection@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 orientation in carrier tape sot-323 carrier tape sot-323 document no.: s 8-v-3717.08-002 (4) created - date: 09. feb. 2010 22761 top view unreelin g d irection document no.: s 8-v-3717.08-002 (4) created - date: 09. feb. 2010 22762 a a-a s ection a 4 0.1 2 0.05 1.75 0.1 0.254 0.013 ? 1 +0.25 0.00 4 0.1 b b 3.5 0.05 8 +0.3 -0.1 b-b s ection 2.4 +0.1 +0.1 1.19 0.1 2.4 0.1 ? 1.55 +0.1 0.0
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